半導体と溶液界面:EC-STSとATR-FTIRによるアプローチ
Semiconductor and Solution Interface Investigated by EC-STS and ATR-FTIR Measurments

  1. Ye, S.; Li, G.; Noda, H.; Uosaki K.; Osawa, M. Characterization of Self-Assembled Monolayers of Alkanethiol on GaAs Surface by Contact Angle and Angle-resolved XPS Measurements, Surf. Sci., 2003, 529, 163-170.   Abstract and Full Text

  2. Ye, S.; Ichihara, T.; Uosaki, K. Spectroscopic Studies on Electroless Deposition of Copper on a Hydrogen Terminated Si(111) Surface in Fluoride Solutions, J. Electrochem. Soc., 2001, 148, C421-C426.   Abstract and Full Text

  3. Ye, S.; Saito, T.; Nihonyanagi, S.; Uosaki, K.; Miranda, P. B.; Kim, D.; Shen, Y. R.  Stability of the Si-H Bond on the Hydrogen Terminated Si(111) Surface Studied by Sum Frequency Generation (SFG), Surf. Sci., 2001, 476, 121-128.   Abstract and Full Text

  4. Baum, T.; Ye, S.; Uosaki, K.  Formation of Self-Assembled Monolayers of Alkanethiols on GaAs Surface with in situ Surface Activation by Ammonium Hydroxide.  Langmuir, 1999, 15, 8577-8579.   Abstract and Full Text
       
  5. Ye, S.; Ichihara, T.; Uosaki, K.  An Attenuated Total Reflection Fourier Transform Infrared Spectroscopy Study of the Adsorption of Organic Contaminants on the Hydrogen Terminated Si(111) Surface in Air. Appl. Phys. Lett., 1999, 75, 1562- 1564.   Abstract and Full Text

  6. Uosaki, K.; Koinuma, M.; Kondo, T.; Ye, S.; Yagi, I.; Noguchi, H.; Tamura, K.; Takeshita, K.; Matsushita, T.  In situ observation of anodic dissolution process of p-GaAs(001) in HCl solution by surface X-ray diffraction.  J. Electroanal. Chem., 1997, 429, 13-17.   Abstract and Full Text

  7. Yamada, R.; Ye, S.; Uosaki, K.  Novel scanning probe microscope for local elasticity measurement.  Jpn. J. Appl. Phys., 1996, 35, L846-L848.   Abstract and Full Text

  8. Uosaki, K.; Ye, S.; Sekine, N.  Study of the electronic structure of GaAs(100) single crystal electrode / electrolyte interface by electrochemical tunneling spectroscopy.  Bull. Chem. Soc. Jpn., 1996, 69, 275-288